Manufacturer Part Number
IXTQ50N20P
Manufacturer
IXYS Corporation
Introduction
The IXTQ50N20P is a high-performance N-channel MOSFET transistor designed for a variety of power electronics and industrial applications.
Product Features and Performance
200V drain-to-source voltage
50A continuous drain current
60mOhm maximum on-resistance
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 2720pF
Maximum power dissipation of 360W
Product Advantages
Efficient power handling
High reliability and robustness
Suitable for high-power switching applications
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 60mOhm @ 50A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 2720pF @ 25V
Power Dissipation (Tc): 360W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for various power electronics and industrial applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial automation
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Robust and reliable design for long-lasting performance
RoHS3 compliance for environmental friendliness