Manufacturer Part Number
IXTQ36N30P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High drain-to-source voltage: 300V
Low on-resistance: 110mΩ
High continuous drain current: 36A
Low input capacitance: 2250pF
High power dissipation: 300W
Product Advantages
Excellent thermal performance
Robust and reliable design
Efficient power switching
Suitable for high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 300V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 110mΩ
Continuous Drain Current (Id): 36A
Input Capacitance (Ciss): 2250pF
Power Dissipation (Pd): 300W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature environments
Robust and durable construction
Compatibility
TO-3P package
Suitable for various high-power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance and reliability
Efficient power switching capabilities
Suitable for high-power, high-voltage applications
Wide operating temperature range
Robust and durable design