Manufacturer Part Number
IXTQ26N50P
Manufacturer
IXYS Corporation
Introduction
The IXTQ26N50P is a high-performance N-channel power MOSFET transistor in a TO-3P package, designed for use in various power electronics applications.
Product Features and Performance
500V drain-to-source voltage rating
26A continuous drain current rating at 25°C
230mΩ maximum on-resistance at 13A, 10V
Wide operating temperature range of -55°C to 150°C
Low gate charge of 65nC at 10V
High input capacitance of 3600pF at 25V
400W maximum power dissipation
Product Advantages
Robust and reliable performance
Efficient power delivery
Suitable for high-voltage, high-current applications
Compact TO-3P package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 230mΩ @ 13A, 10V
Continuous Drain Current (Id): 26A @ 25°C
Power Dissipation (Pd): 400W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Suitable for high-temperature and harsh environments
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial control systems.
Application Areas
Industrial motor drives
Power supplies
Inverters and converters
Industrial control systems
Renewable energy systems
Product Lifecycle
The IXTQ26N50P is an actively supported product by IXYS Corporation.
Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Efficient power delivery through low on-resistance
Compact and robust TO-3P package
Wide operating temperature range
Reliable and durable performance
Suitable for demanding power electronics applications
