Manufacturer Part Number
IXTQ50N25T
Manufacturer
IXYS Corporation
Introduction
The IXTQ50N25T is a high-power N-channel MOSFET from IXYS Corporation, designed for a variety of power electronics applications.
Product Features and Performance
Trench MOSFET technology
High drain-source voltage rating of 250V
Continuous drain current of 50A at 25°C case temperature
Very low on-resistance of 60mΩ at 25A, 10V
Wide operating temperature range of -55°C to 150°C
Low gate charge of 78nC at 10V
Product Advantages
Excellent power handling capabilities
Very low conduction losses
Reliable operation in high-temperature environments
Efficient switching performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 60mΩ @ 25A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 4000pF @ 25V
Power Dissipation (Tc): 400W
Quality and Safety Features
RoHS3 compliant
TO-3P package for efficient heat dissipation
Trench MOSFET technology for reliable performance
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and inverters.
Application Areas
Industrial equipment
Renewable energy systems
Power conversion and control
Electric vehicles
Product Lifecycle
The IXTQ50N25T is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from IXYS or other MOSFET manufacturers.
Several Key Reasons to Choose This Product
Excellent power handling capabilities with a high drain-source voltage rating and continuous drain current.
Extremely low on-resistance, leading to reduced conduction losses and increased efficiency.
Wide operating temperature range, enabling reliable operation in demanding environments.
Efficient switching performance due to the low gate charge.
Robust and reliable design with trench MOSFET technology and efficient TO-3P packaging.