Manufacturer Part Number
IXTH12N120
Manufacturer
IXYS Corporation
Introduction
High voltage N-channel MOSFET
Product Features and Performance
Capable of handling high drain-to-source voltages up to 1200V
Continuous drain current up to 12A at 25°C
Low on-resistance of 1.4Ω at 6A, 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Suitable for high-voltage, high-current switching applications
Robust design for reliable operation
Efficient power conversion and control
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1200V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.4Ω @ 6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 3400pF @ 25V
Power Dissipation (Pd): 500W @ Tc
Quality and Safety Features
Manufactured using robust MOSFET technology
Designed to meet high-reliability requirements
Undergoes stringent quality control and testing
Compatibility
Through-hole mounting in TO-247 package
Suitable for a wide range of high-voltage, high-current applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control systems
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable performance
Robust design and quality construction for long-term reliability
Compatibility with common high-voltage, high-current applications
IXTH11N80IXYS / Littelfuse