Manufacturer Part Number
IXTH12N65X2
Manufacturer
IXYS Corporation
Introduction
This product is a high-performance N-Channel MOSFET transistor from the Ultra X2 series, designed for a wide range of power electronics applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 650V
Continuous Drain Current (Id) of 12A at 25°C
Low On-State Resistance (Rds(on)) of 300mOhm at 6A, 10V
Wide Operating Temperature Range of -55°C to 150°C
High Input Capacitance (Ciss) of 1100pF at 25V
Maximum Power Dissipation of 180W at Tc
Product Advantages
Excellent high-voltage and high-current handling capabilities
Efficient power switching performance with low on-state resistance
Wide operating temperature range for versatile applications
Robust and reliable design for industrial and automotive use
Key Technical Parameters
N-Channel MOSFET Technology
Vgs(th) (Max) of 5V at 250A
Gate Charge (Qg) of 17nC at 10V
Drive Voltage Range of 10V
Quality and Safety Features
RoHS3 compliant for environmental responsibility
TO-247 package with through-hole mounting
Compatibility
This MOSFET is widely compatible with various power electronics designs and can be used as a replacement or upgrade in existing systems.
Application Areas
Power conversion and motor control systems
Inverters, converters, and switch-mode power supplies
Industrial automation and control equipment
Automotive electronics and power management
Product Lifecycle
The IXTH12N65X2 is a current production part and is not nearing discontinuation. Replacement or upgrade options are available within the IXYS Ultra X2 series.
Key Reasons to Choose This Product
Excellent high-voltage and high-current handling capabilities
Efficient power switching performance with low on-state resistance
Wide operating temperature range for versatile applications
Robust and reliable design for industrial and automotive use
RoHS3 compliance for environmental responsibility
Compatibility with a wide range of power electronics designs
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