Manufacturer Part Number
IXTH12N90
Manufacturer
IXYS Corporation
Introduction
The IXTH12N90 is a high-power N-channel MOSFET transistor designed for a variety of power conversion and control applications.
Product Features and Performance
900V drain-to-source voltage rating
12A continuous drain current at 25°C
900mΩ maximum on-resistance at 6A, 10V
4500pF maximum input capacitance at 25V
300W maximum power dissipation
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Robust design for reliable operation
Suitable for a wide range of power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 900mΩ @ 6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 4500pF @ 25V
Power Dissipation (Ptot): 300W
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-power applications
Robust TO-247 package for reliable operation
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
The IXTH12N90 is an active product, with no known plans for discontinuation.
Replacements and upgrades may be available from the manufacturer or through authorized distributors.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding applications
Low on-resistance for efficient power conversion
Robust design and packaging for reliable operation
Suitable for a wide range of power conversion and control applications
RoHS3 compliance for environmentally-friendly use
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