IXTH12N90 - IXYS

Manufacturer Part Number

IXTH12N90

Manufacturer

IXYS Corporation

Introduction

The IXTH12N90 is a high-power N-channel MOSFET transistor designed for a variety of power conversion and control applications.

Product Features and Performance

900V drain-to-source voltage rating

12A continuous drain current at 25°C

900mΩ maximum on-resistance at 6A, 10V

4500pF maximum input capacitance at 25V

300W maximum power dissipation

Product Advantages

High voltage and current handling capabilities

Low on-resistance for efficient power conversion

Robust design for reliable operation

Suitable for a wide range of power applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 900V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 900mΩ @ 6A, 10V

Continuous Drain Current (Id): 12A @ 25°C

Input Capacitance (Ciss): 4500pF @ 25V

Power Dissipation (Ptot): 300W

Quality and Safety Features

RoHS3 compliant

Suitable for high-voltage, high-power applications

Robust TO-247 package for reliable operation

Compatibility

Suitable for a wide range of power conversion and control applications

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Industrial automation

Product Lifecycle

The IXTH12N90 is an active product, with no known plans for discontinuation.

Replacements and upgrades may be available from the manufacturer or through authorized distributors.

Key Reasons to Choose This Product

High voltage and current handling capabilities for demanding applications

Low on-resistance for efficient power conversion

Robust design and packaging for reliable operation

Suitable for a wide range of power conversion and control applications

RoHS3 compliance for environmentally-friendly use