Manufacturer Part Number
IXTH13N110
Manufacturer
IXYS Corporation
Introduction
High-voltage N-channel power MOSFET
Designed for high-power switching and amplifier applications
Product Features and Performance
Operates at high voltage up to 1100V
Continuous drain current up to 13A at 25°C
Low on-resistance of 920mΩ
Fast switching speed and low gate charge
Wide operating temperature range from -55°C to 150°C
Product Advantages
Efficient power conversion with low losses
Suitable for high-voltage, high-current applications
Reliable and robust performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 920mΩ
Continuous Drain Current (Id): 13A
Input Capacitance (Ciss): 5650pF
Power Dissipation (Tc): 360W
Quality and Safety Features
Designed to meet high reliability and safety standards
Robust TO-247 package for thermal management
Compatibility
Suitable for a wide range of high-power switching and amplifier applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial and automotive electronics
Product Lifecycle
Currently available
No information on discontinuation or replacement models
Several Key Reasons to Choose This Product
High-voltage and high-current capabilities
Efficient power conversion with low losses
Reliable and robust performance in a wide temperature range
Suitable for a variety of high-power applications
Proven IXYS technology and quality assurance
IXTH15N50AIXYS / LittelfuseIGBT Module