Manufacturer Part Number
IXTH110N10L2
Manufacturer
IXYS Corporation
Introduction
High-Performance N-Channel MOSFET
Product Features and Performance
110A Continuous Drain Current (Tc)
100V Drain-Source Voltage (Vdss)
18mOhm On-Resistance (Rds(on)) at 500mA, 10V
600W Power Dissipation (Tc)
10,500pF Input Capacitance (Ciss) at 25V
260nC Gate Charge (Qg) at 10V
Product Advantages
Excellent current handling and low on-resistance
High power dissipation capability
Suitable for high-power switching applications
Key Technical Parameters
N-Channel MOSFET
Vdss: 100V
Vgs(max): ±20V
Rds(on) (max): 18mOhm @ 500mA, 10V
Id (continuous): 110A (Tc)
Ciss (max): 10,500pF @ 25V
Qg (max): 260nC @ 10V
Power Dissipation (max): 600W (Tc)
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Suitable for high-power switching applications such as motor drives, power supplies, and industrial controls.
Application Areas
Motor drives
Power supplies
Industrial controls
High-power switching applications
Product Lifecycle
This product is an active and widely used MOSFET with no plans for discontinuation. Replacements and upgrades are available from IXYS Corporation.
Key Reasons to Choose This Product
Excellent current handling and low on-resistance for high-efficiency power conversion
High power dissipation capability for reliable operation in demanding applications
Proven performance and quality from a reputable manufacturer, IXYS Corporation