Manufacturer Part Number
IXTF200N10T
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically a single N-channel MOSFET transistor.
Product Features and Performance
Trench MOSFET technology
Through-hole mounting
Operating temperature range: -55°C to 175°C
Drain-to-source voltage (Vdss) of 100V
Gate-to-source voltage (Vgs) range of ±30V
Low on-resistance (Rds(on)) of 7mΩ at 50A, 10V
Continuous drain current (Id) of 90A at 25°C
Input capacitance (Ciss) of 9400pF at 25V
Maximum power dissipation of 156W at Tc
Product Advantages
High current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Robust and reliable trench MOSFET technology
Key Technical Parameters
Drain-to-source voltage (Vdss): 100V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 7mΩ @ 50A, 10V
Continuous drain current (Id): 90A @ 25°C
Input capacitance (Ciss): 9400pF @ 25V
Power dissipation (Max): 156W @ Tc
Quality and Safety Features
RoHS3 compliant
ISOPLUS i4-PAC package for improved thermal performance
Compatibility
This MOSFET is suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial control systems.
Application Areas
Power electronics
Motor drives
Power supplies
Industrial control systems
Product Lifecycle
The IXTF200N10T is an actively supported product, and replacement or upgrade options are available from IXYS Corporation.
Key Reasons to Choose This Product
High current handling capability of up to 90A continuous drain current
Low on-resistance for efficient power conversion
Wide operating temperature range of -55°C to 175°C
Robust and reliable trench MOSFET technology
ISOPLUS i4-PAC package for improved thermal performance
RoHS3 compliance for environmental responsibility