Manufacturer Part Number
IXTA86N20T
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET Technology
High Power Handling Capability
Low On-Resistance
High Blocking Voltage
Low Gate Charge
Wide Operating Temperature Range
Product Advantages
Efficient Power Conversion
High Reliability
Compact Design
Key Technical Parameters
Drain to Source Voltage (Vdss): 200V
Gate to Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 29mΩ @ 500mA, 10V
Continuous Drain Current (Id): 86A @ 25°C
Input Capacitance (Ciss): 4500pF @ 25V
Power Dissipation (Pd): 480W @ Tc
Quality and Safety Features
RoHS3 Compliant
Suitable for High-Temperature Applications
Compatibility
TO-263-3, DPak (2 Leads + Tab), TO-263AB Package
Surface Mount Mounting
Application Areas
Power Conversion
Motor Drives
Switching Power Supplies
Industrial Electronics
Product Lifecycle
Currently in Active Production
Replacement or Upgrade Options Available
Key Reasons to Choose This Product
High Power Handling Capability
Efficient Power Conversion
Low On-Resistance for Reduced Power Losses
Wide Operating Temperature Range for Versatile Applications
Compact Surface Mount Package for Space-Constrained Designs
Reliable Performance and Long Lifespan