Manufacturer Part Number
IXTA60N20T
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET with low on-resistance and high switching speed
Product Features and Performance
High drain-source voltage up to 200V
Low on-resistance down to 40mΩ
Fast switching speed
High current handling up to 60A
High power dissipation up to 500W
Trench MOSFET technology
Product Advantages
Excellent power efficiency
High reliability and robustness
Compact surface mount package
Suitable for various power conversion and control applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 40mΩ
Continuous Drain Current (Id): 60A
Input Capacitance (Ciss): 4530pF
Power Dissipation (Pd): 500W
Quality and Safety Features
RoHS3 compliant
Reliable TO-263 package
Compatibility
Surface mount package
Can be used in various power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
High efficiency and performance
Compact and reliable package
Versatile application capabilities
Excellent value for power electronics applications
IXTA7N80IXYS / Littelfuse