IXTA6N50D2 - IXYS

Manufacturer Part Number

IXTA6N50D2

Manufacturer

IXYS Corporation

Introduction

The IXTA6N50D2 is a high-performance depletion mode N-channel MOSFET transistor suitable for a wide range of power electronics applications.

Product Features and Performance

High drain-source voltage rating of 500V

Low on-resistance (Rds(on)) of 500mOhm @ 3A, 0V

Continuous drain current (ID) of 6A at 25°C case temperature

Wide operating temperature range of -55°C to 150°C

Fast switching characteristics with low input capacitance (Ciss) of 2800pF @ 25V

High power handling capability up to 300W

Product Advantages

Excellent performance for power conversion and control applications

Compact and reliable TO-263 package design

Compatible with standard MOSFET gate drive circuits

RoHS compliant for environmentally-friendly use

Key Technical Parameters

Drain-Source Voltage (Vdss): 500V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 500mOhm @ 3A, 0V

Continuous Drain Current (ID): 6A @ 25°C

Quality and Safety Features

Reliable MOSFET technology for long-term performance

Compliant with RoHS environmental directives

Compatibility

The IXTA6N50D2 is compatible with standard MOSFET gate drive circuits and can be used in a wide range of power electronics applications.

Application Areas

Power conversion and control circuits

Motor drives

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

The IXTA6N50D2 is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer or other suppliers.

Several Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-resistance for efficient power conversion

Fast switching performance for high-frequency applications

Reliable and compact TO-263 package design

RoHS compliance for environmentally-friendly use

Compatibility with standard MOSFET gate drive circuits