Manufacturer Part Number
IXTA76N25T
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel enhancement-mode power MOSFET transistor with trench technology, ideal for high-power, high-efficiency switching applications.
Product Features and Performance
Trench MOSFET technology for low on-resistance and high-speed switching
High current capability of up to 76A continuous drain current
Low drain-source on-resistance of only 39mΩ
Wide voltage range with 250V drain-source voltage rating
Wide operating temperature range of -55°C to 150°C
Low gate charge of 92nC for efficient switching
High power dissipation capability of 460W
Product Advantages
Excellent for high-power, high-efficiency switching applications
Robust design with high current and voltage ratings
Efficient switching performance with low on-resistance and gate charge
Wide temperature range for diverse operating environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 76A
On-Resistance (Rds(on)): 39mΩ
Input Capacitance (Ciss): 4500pF
Power Dissipation (Tc): 460W
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
TO-263-3, DPak (2 Leads + Tab), TO-263AB package
Trench series
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Automotive electronics
Renewable energy systems
Product Lifecycle
Currently available
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High current and voltage capability for demanding applications
Efficient switching performance with low on-resistance and gate charge
Robust design for reliable operation across a wide temperature range
Compatibility with surface mount assembly processes
Suitable for a variety of high-power, high-efficiency switching applications
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