Manufacturer Part Number
IXTB30N100L
Manufacturer
IXYS Corporation
Introduction
High-voltage, high-power N-channel MOSFET in a TO-264-3 package.
Product Features and Performance
Drain-to-source voltage (Vdss) of 1000 V
Continuous drain current (Id) of 30 A at 25°C case temperature
On-resistance (RDS(on)) of 450 mΩ at 500 mA, 20 V
Input capacitance (Ciss) of 13,200 pF at 25 V
Power dissipation (Pd) of 800 W at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Suitable for high-power switching applications
Robust and reliable performance
Key Technical Parameters
Drain-to-source voltage (Vdss): 1000 V
Gate-to-source voltage (Vgs): ±30 V
On-resistance (RDS(on)): 450 mΩ @ 500 mA, 20 V
Continuous drain current (Id): 30 A @ 25°C case temperature
Input capacitance (Ciss): 13,200 pF @ 25 V
Power dissipation (Pd): 800 W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Robust and reliable design
Compatibility
Compatible with various high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available from the manufacturer.
Several Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Low on-resistance for efficient power conversion
Robust and reliable performance across a wide temperature range
RoHS3 compliance for environmental responsibility
Compatibility with various high-power switching applications