Manufacturer Part Number
IXTB62N50L
Manufacturer
IXYS Corporation
Introduction
High-performance, high-voltage N-channel MOSFET transistor in a TO-264 package.
Product Features and Performance
Maximum drain-to-source voltage of 500V
Low on-resistance of 100mΩ at 31A and 20V
Continuous drain current of 62A at 25°C case temperature
High power dissipation of 800W at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
High voltage operation
Low on-resistance for efficient power conversion
Robust and reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 100mΩ @ 31A, 20V
Continuous Drain Current (Id): 62A @ 25°C
Power Dissipation (Pd): 800W @ 25°C
Quality and Safety Features
RoHS3 compliant
PLUS264 package for enhanced thermal performance and reliability
Compatibility
TO-264-3, TO-264AA package compatible
Application Areas
High-power switching applications
Power supplies
Motor drives
Welding equipment
Industrial and medical equipment
Product Lifecycle
Currently in active production
No plans for discontinuation
Key Reasons to Choose This Product
Excellent power handling capability with high voltage and current ratings
Low on-resistance for efficient power conversion
Robust and reliable performance over a wide temperature range
Compact and efficient TO-264 package
RoHS3 compliance for environmental responsibility
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