Manufacturer Part Number
IXTH10N100D2
Manufacturer
IXYS Corporation
Introduction
This is a high-power, N-channel, depletion mode MOSFET transistor from IXYS Corporation.
Product Features and Performance
1000V drain-source voltage rating
10A continuous drain current rating
5Ω maximum on-resistance
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 5320pF
200nC maximum gate charge
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Suitable for use in high-power, high-temperature applications
Depletion mode operation for simple gate drive requirements
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.5Ω @ 5A, 10V
Continuous Drain Current (Id): 10A @ 25°C
Input Capacitance (Ciss): 5320pF @ 25V
Gate Charge (Qg): 200nC @ 5V
Quality and Safety Features
RoHS3 compliant
TO-247 package with through-hole mounting
Compatibility
This MOSFET is compatible with a wide range of high-power, high-voltage applications.
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial controls
Welding equipment
High-voltage power conversion
Product Lifecycle
This MOSFET is an active product and is not nearing discontinuation. Replacements and upgrades may be available from IXYS Corporation.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range for use in harsh environments
Depletion mode operation for simple gate drive requirements
RoHS3 compliance for environmentally-friendly applications
Availability and support from a leading semiconductor manufacturer, IXYS Corporation
IXTC260IXYS / Littelfuse