IXTH10P60 - IXYS

Manufacturer Part Number

IXTH10P60

Manufacturer

IXYS Corporation

Introduction

High-power P-channel MOSFET with fast switching and low on-resistance.

Product Features and Performance

600V drain-to-source voltage rating

10A continuous drain current at 25°C

1Ω maximum on-resistance at 5A, 10V

4700pF maximum input capacitance at 25V

300W maximum power dissipation at 25°C

Product Advantages

Suitable for high-power switching applications

Low on-resistance for efficient power conversion

Fast switching for improved system performance

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Drain-to-source voltage (Vdss): 600V

Gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 1Ω @ 5A, 10V

Continuous drain current (Id): 10A at 25°C

Input capacitance (Ciss): 4700pF @ 25V

Power dissipation (Pd): 300W at 25°C

Quality and Safety Features

RoHS3 compliant

TO-247 package for reliable high-power operation

Suitable for industrial and automotive applications

Compatibility

Suitable for high-power switching applications, such as power supplies, motor drives, and power conversion systems.

Application Areas

Power supplies

Motor drives

Power conversion systems

Industrial and automotive electronics

Product Lifecycle

This product is an active, in-production part.

Replacement or upgrade options may be available from IXYS or other manufacturers.

Several Key Reasons to Choose This Product

High voltage rating and low on-resistance for efficient power conversion

Fast switching capability for improved system performance

Wide operating temperature range for reliable operation in harsh environments

RoHS3 compliance for use in environmentally-conscious applications

Proven reliability in industrial and automotive applications