Manufacturer Part Number
IXTH10P50P
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
P-Channel MOSFET
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Current Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Product Advantages
High voltage capability
Low on-resistance
High current handling
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Mounting Type: Through Hole
Application Areas
Suitable for various power electronics applications
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
High voltage capability up to 500V
Low on-resistance of 1Ohm
High current handling of 10A
Suitable for a variety of power electronics applications
IXTH11N80IXYS / Littelfuse