Manufacturer Part Number
IXFN82N60Q3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET with advanced HiPerFET Q3 technology for high-efficiency, high-power applications.
Product Features and Performance
600V drain-to-source voltage
75mΩ maximum on-resistance at 41A, 10V
66A continuous drain current at 25°C case temperature
13500pF maximum input capacitance at 25V
960W maximum power dissipation at 25°C case temperature
-55°C to 150°C operating temperature range
Product Advantages
Reduced conduction losses for high-efficiency operation
Compact size and low profile for space-constrained designs
Robust performance across wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 75mΩ @ 41A, 10V
Continuous Drain Current (Id): 66A @ 25°C
Quality and Safety Features
RoHS3 compliant
Housed in reliable SOT-227B package
Compatibility
Suitable for use in a variety of high-power, high-efficiency applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation and control
Product Lifecycle
Current product offering
Replacements and upgrades may be available
Key Reasons to Choose
High efficiency and low conduction losses
Robust performance across wide temperature range
Compact size and low profile
Reliable SOT-227B package