IXFN80N50Q2 - IXYS

Manufacturer Part Number

IXFN80N50Q2

Manufacturer

IXYS Corporation

Introduction

This is a discrete semiconductor product, specifically a high-performance N-channel MOSFET transistor.

Product Features and Performance

High voltage rating of 500V drain-to-source

Low on-resistance of 60mΩ

High continuous drain current of 72A

Wide operating temperature range of -55°C to 150°C

Fast switching capabilities with low input capacitance of 12800pF

High power dissipation of 890W

Product Advantages

Excellent power handling and efficiency

Robust high-temperature operation

High reliability and ruggedness

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 500V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 60mΩ

Continuous Drain Current (Id): 72A

Input Capacitance (Ciss): 12800pF

Power Dissipation (Tc): 890W

Quality and Safety Features

RoHS3 compliant

SOT-227B package for improved thermal performance and reliability

Compatibility

This MOSFET is compatible with a wide range of power electronics applications.

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and available. No information on impending discontinuation or replacements.

Key Reasons to Choose This Product

Excellent power handling and efficiency

Robust high-temperature operation

High reliability and ruggedness

Broad compatibility and application areas