Manufacturer Part Number
IXFN90N85X
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
Designed for high-frequency, high-power switching applications
Ultra-low on-resistance for high efficiency
High drain-to-source breakdown voltage
Fast switching characteristics
Low gate charge for high-speed operation
Product Advantages
Excellent thermal performance and power handling
Reliable and robust design
Optimized for high-frequency, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 850 V
Gate-to-Source Voltage (Vgs): ±30 V
On-Resistance (Rds(on)): 41 mΩ @ 500 mA, 10 V
Continuous Drain Current (Id): 90 A @ 25°C
Input Capacitance (Ciss): 13,300 pF @ 25 V
Power Dissipation (Tc): 1,200 W
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Rugged and reliable design
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and transportation electronics
Product Lifecycle
Current model, no discontinuation plans
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent thermal performance and power handling
Ultra-low on-resistance for high efficiency
Fast switching characteristics for high-speed operation
Reliable and robust design for demanding applications
Compatibility with a wide range of high-power, high-frequency systems
IXFP130N10TIXYSMOSFET N-CH 100V 130A TO220AB