Manufacturer Part Number
IXFN90N30
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor with excellent power handling capabilities.
Product Features and Performance
N-channel MOSFET design
High drain-to-source voltage (300V)
Low on-resistance (33mOhm)
High continuous drain current (90A)
Wide operating temperature range (-55°C to 150°C)
Low gate charge (360nC)
High power dissipation (560W)
Product Advantages
Robust and reliable performance
Efficient power handling
Suitable for high-power applications
Wide temperature range for diverse use cases
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 300V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 33mOhm
Continuous Drain Current (Id): 90A
Power Dissipation (Tc): 560W
Input Capacitance (Ciss): 10,000pF
Quality and Safety Features
Compliant with industry standards
Rigorous quality control and testing
Designed for safe and reliable operation
Compatibility
Suitable for a variety of high-power, high-voltage applications
Application Areas
Power switching circuits
Motor drives
Power supplies
Inverters
Welding equipment
Industrial automation
Product Lifecycle
This product is an active and widely-used MOSFET solution.
Replacement or upgraded options may be available in the future.
Several Key Reasons to Choose This Product
Exceptional power handling and efficiency
Wide operating temperature range for versatile use
Low on-resistance for improved system performance
High reliability and robustness for demanding applications
Compatibility with a broad range of high-power, high-voltage systems
IXFP12N65X2MIXYSMOSFET N-CH 650V 12A TO220