Manufacturer Part Number
IXFN80N50Q3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor in a SOT-227B package, part of the HiPerFET Q3 Class series.
Product Features and Performance
500V drain-to-source voltage (Vdss)
65mΩ maximum on-resistance (Rds(on)) at 40A, 10V
63A continuous drain current (Id) at 25°C case temperature
10,000pF maximum input capacitance (Ciss) at 25V
780W maximum power dissipation at 25°C case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Compact SOT-227B package for space-constrained designs
Wide operating temperature range
Key Technical Parameters
N-channel MOSFET technology
±30V maximum gate-to-source voltage (Vgs)
5V maximum threshold voltage (Vgs(th)) at 8mA drain current
200nC maximum gate charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Chassis mount package
Compatibility
Suitable for use in a variety of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current product, no discontinuation or replacement planned
Several Key Reasons to Choose This Product
Excellent voltage and current handling capabilities
Low on-resistance for efficient power switching
Compact package for space-constrained designs
Wide operating temperature range for versatile applications
RoHS3 compliance for environmental responsibility
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