IXFN80N60P3 - IXYS

Manufacturer Part Number

IXFN80N60P3

Manufacturer

IXYS Corporation

Introduction

This product is a high-performance N-channel MOSFET transistor from the IXYS Corporation's HiPerFET Polar3 series.

Product Features and Performance

Operating temperature range of -55°C to 150°C

Drain-to-source voltage (Vdss) of 600V

Maximum gate-to-source voltage (Vgs) of ±30V

Low on-resistance (Rds_on) of 70mΩ at 40A, 10V

Continuous drain current (Id) of 66A at 25°C (Tc)

Input capacitance (Ciss) of 13,100pF at 25V

Power dissipation (max) of 960W at Tc

Gate charge (Qg) of 190nC at 10V

Product Advantages

Excellent performance in high-voltage, high-current applications

Low on-resistance for efficient power conversion

High reliability and robustness

Key Technical Parameters

MOSFET technology

N-channel FET type

Threshold voltage (Vgs(th)) of 5V at 8mA

Drive voltage range of 10V

Quality and Safety Features

RoHS3 compliant

SOT-227B package

Compatibility

Chassis mount configuration

Application Areas

Power conversion and control

Industrial automation

Renewable energy systems

Motor drives

Product Lifecycle

This product is currently in production and available. No discontinuation or replacement is planned at this time.

Key Reasons to Choose This Product

High-performance MOSFET with low on-resistance for efficient power conversion

Wide operating temperature range and high power dissipation capability

Robust and reliable design for industrial and high-power applications

Ease of integration with chassis mount packaging