Manufacturer Part Number
IXFN80N50P
Manufacturer
IXYS Corporation
Introduction
High-performance power MOSFET transistor
Designed for high-power, high-voltage applications
Product Features and Performance
Robust and reliable design
Low on-resistance for high efficiency
High blocking voltage capability
Fast switching speeds
Optimized for high-frequency operation
Wide operating temperature range
Product Advantages
Excellent thermal management
High power density
Enhanced ruggedness and reliability
Efficient power conversion
Key Technical Parameters
Drain-source voltage (Vdss): 500V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 65mΩ
Continuous drain current (Id): 66A
Input capacitance (Ciss): 12,700pF
Power dissipation (Ptot): 700W
Quality and Safety Features
RoHS3 compliant
SOT-227B package for improved thermal performance
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of high-power, high-voltage applications
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation at this time
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Wide operating temperature range
High power density and thermal management
Proven track record in high-power, high-voltage applications
IXFN79N20Fujitsu Electronics America, Inc.IGBT Module