Manufacturer Part Number
IXFN80N50
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor
Designed for high-power, high-frequency switching applications
Product Features and Performance
Capable of operating at high voltages up to 500V
Very low on-resistance (Rds(on)) of 55mOhm @ 500mA, 10V
High continuous drain current of 66A at 25°C (Tc)
Wide operating temperature range of -55°C to 150°C
Fast switching characteristics with low gate charge of 380nC @ 10V
Product Advantages
Excellent thermal and electrical performance
Robust design for high-reliability applications
Supports high-power, high-frequency switching
Key Technical Parameters
Drain to Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs) Max: ±20V
Input Capacitance (Ciss) Max: 9890pF @ 25V
Power Dissipation Max: 700W (Tc)
Quality and Safety Features
RoHS3 compliant
SOT-227B package for chassis mount
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently available, no indication of discontinuation
Several Key Reasons to Choose This Product
Excellent performance characteristics for high-power, high-frequency switching
Robust and reliable design for demanding applications
Wide operating temperature range and high power handling capability
SOT-227B package provides convenient chassis mount option