Manufacturer Part Number
MRF6VP121KHR6
Manufacturer
NXP Semiconductors
Introduction
This is a high-performance RF power MOSFET transistor designed for use in various RF power amplifier applications, such as mobile base stations, repeaters, and broadcast transmitters.
Product Features and Performance
High output power of 1000W
Operates at a frequency of 1.03GHz
Provides a gain of 20dB
Rated voltage of 110V and test voltage of 50V
Test current of 150mA
Chassis mount configuration
Product Advantages
Excellent RF performance for high-power applications
Robust design and reliable operation
Supports efficient and high-power RF amplifier designs
Key Technical Parameters
Manufacturer Part Number: MRF6VP121KHR6
Technology: LDMOS
Configuration: Dual
Package: NI-1230 (Tape & Reel)
Quality and Safety Features
RoHS3 compliant
High-quality manufacturing and testing processes
Compatibility
This RF power MOSFET is designed to be compatible with various RF power amplifier circuits and systems that require high-power, high-frequency transistors.
Application Areas
Mobile base stations
Repeaters
Broadcast transmitters
Other high-power RF amplifier applications
Product Lifecycle
The MRF6VP121KHR6 is an active and widely available product from NXP Semiconductors. There are no immediate plans for discontinuation, and replacement or upgrade options may be available as technology evolves.
Reasons to Choose This Product
Exceptional RF performance with high output power and gain
Reliable and robust design for demanding applications
Efficient and high-power RF amplifier design capabilities
Compatibility with various RF power amplifier systems
Availability and support from a reputable semiconductor manufacturer, NXP Semiconductors
