Manufacturer Part Number
MRF6VP2600HR5
Manufacturer
NXP Semiconductors
Introduction
The MRF6VP2600HR5 is a high-performance, dual RF power MOSFET transistor designed for use in various RF power amplifier applications.
Product Features and Performance
125W of output power at 225MHz
25dB of power gain
6A of test current
50V of test voltage
Operates at a frequency of 225MHz
Chassis mount package (NI-1230)
Product Advantages
Excellent high-frequency performance
High power output
Efficient power conversion
Robust and reliable design
Key Technical Parameters
LDMOS technology
110V rated voltage
Dual configuration
Quality and Safety Features
RoHS3 compliant
NI-1230 packaging
Compatibility
Suitable for use in various RF power amplifier applications
Application Areas
Radio frequency (RF) power amplifiers
Wireless communication systems
Industrial, scientific, and medical (ISM) equipment
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
High-performance RF power transistor
Efficient and reliable operation
Suitable for a wide range of RF power amplifier applications
Backed by the expertise of NXP Semiconductors