Manufacturer Part Number
MRF6VP3450HR6
Manufacturer
Freescale Semiconductor, Inc. (NXP Semiconductors)
Introduction
This product is a high-performance, radio frequency (RF) metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in various RF and microwave applications.
Product Features and Performance
Dual configuration with 90W output power
High-efficiency LDMOS technology
Operates at a frequency of 860MHz
Gain of 22.5dB
Rated voltage of 110V and test voltage of 50V
Test current of 1.4A
Product Advantages
Excellent power handling and efficiency
Suitable for a wide range of RF and microwave applications
Robust and reliable design
Key Technical Parameters
Manufacturer Part Number: MRF6VP3450HR6
Packaging: NI-1230 Bulk
Technology: LDMOS
Power Output: 90W
Current (Test): 1.4A
Voltage (Rated): 110V
Voltage (Test): 50V
Gain: 22.5dB
Frequency: 860MHz
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
This product is compatible with various RF and microwave systems and equipment.
Application Areas
Radio frequency (RF) and microwave applications
Wireless communication systems
Broadcast equipment
Industrial and scientific applications
Product Lifecycle
The MRF6VP3450HR6 is an active and available product. Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power handling and efficiency for RF and microwave applications
Robust and reliable LDMOS technology
Suitable for a wide range of applications
Compliant with RoHS3 safety standards
Compatible with various RF and microwave systems
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