Manufacturer Part Number
MRF6VP2600HR6
Manufacturer
NXP Semiconductors
Introduction
High-performance LDMOS RF power transistors designed for industrial, scientific, and medical (ISM) applications.
Product Features and Performance
High power capability up to 125W
Excellent linearity and efficiency
Broadband performance from 225MHz
Rugged and reliable LDMOS technology
Product Advantages
Optimized for ISM applications
Robust and durable design
Consistent and dependable performance
Key Technical Parameters
Power Output: 125W
Test Current: 2.6A
Rated Voltage: 110V
Gain: 25dB
Test Voltage: 50V
Frequency: 225MHz
Quality and Safety Features
RoHS3 compliant
Reliable and well-tested design
Compatibility
Suitable for a variety of RF power amplifier applications
Application Areas
Industrial, scientific, and medical (ISM) equipment
Wireless infrastructure
Broadcast transmitters
Radio communication systems
Product Lifecycle
Currently in active production
Replacement and upgrade options available
Key Reasons to Choose This Product
High power capability for demanding applications
Excellent linearity and efficiency for optimal performance
Rugged and reliable LDMOS technology for long-lasting use
Broad frequency range for versatile applications
Consistent and dependable quality and performance
