Manufacturer Part Number
MRF6VP11KHR5
Manufacturer
Freescale Semiconductor, Inc. (NXP Semiconductors)
Introduction
High-power LDMOS RF transistor for wireless infrastructure applications
Product Features and Performance
1000W output power
26dB gain
130MHz operating frequency
150mA test current
50V test voltage
Chassis mount configuration
Product Advantages
Robust and reliable performance for wireless infrastructure
High power handling capability
Efficient RF power generation
Suitable for a wide range of wireless applications
Key Technical Parameters
Technology: LDMOS
Power Output: 1000W
Current (Test): 150mA
Voltage (Rated): 110V
Voltage (Test): 50V
Gain: 26dB
Frequency: 130MHz
Mounting Type: Chassis Mount
Quality and Safety Features
Rigorous quality control and testing procedures
Compliance with industry safety standards
Compatibility
Designed for use in wireless infrastructure applications
Application Areas
Wireless base stations
Broadcast transmitters
RF power amplifiers
Product Lifecycle
This product is an active and widely used component in the wireless infrastructure market.
Replacements and upgrades may be available from the manufacturer or authorized distributors.
Several Key Reasons to Choose This Product
High output power and efficiency for demanding wireless applications
Robust and reliable performance for long-term use
Suitable for a variety of wireless infrastructure applications
Supported by the manufacturer's quality and safety assurance
MRF6VP121KHR5Freescale SemiconductorRF POWER FIELD-EFFECT TRANSISTOR