Manufacturer Part Number
MRF6V3090NBR5
Manufacturer
NXP Semiconductors
Introduction
The MRF6V3090NBR5 is a high-performance, radio frequency (RF) metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in various RF power amplifier applications.
Product Features and Performance
High power output of 18W
Low noise and high gain of 22dB
Operating frequency up to 860MHz
Capable of handling high voltages up to 110V
Tested current of 350mA
Utilizes LDMOS technology for improved efficiency and reliability
Product Advantages
Exceptional RF performance for demanding applications
Robust design for reliable operation
Versatile package and mounting options
Compliance with RoHS3 environmental standards
Key Technical Parameters
Power Output: 18W
Gain: 22dB
Operating Voltage: 110V
Operating Current: 350mA
Operating Frequency: 860MHz
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Rigorous quality control and testing during manufacturing
Compatibility
Suitable for use in various RF power amplifier designs and applications
Application Areas
Wireless communication systems
RF power amplifiers
Broadcast equipment
Industrial RF power applications
Product Lifecycle
This product is an active and current offering from NXP Semiconductors
Replacement or upgraded models may become available in the future as technology evolves
Several Key Reasons to Choose This Product
Excellent RF performance with high power output and gain
Robust and reliable design for demanding applications
Compliance with environmental regulations through RoHS3 compliance
Versatile package and mounting options for design flexibility
Trusted brand and manufacturer in the semiconductor industry
