Manufacturer Part Number
MRF6V2010NR1
Manufacturer
NXP Semiconductors
Introduction
High-performance RF MOSFET transistor for wireless communications equipment
Product Features and Performance
High power and efficiency
Broad operating frequency range up to 220 MHz
High gain of 23.9 dB
10W output power
110V rated voltage
Low noise and distortion
Product Advantages
Suitable for high-power RF amplifier applications
Robust and reliable design
Excellent thermal management
Optimized for efficient operation
Key Technical Parameters
Frequency: 220 MHz
Output Power: 10W
Gain: 23.9 dB
Voltage: 110V
Current: 30 mA
Quality and Safety Features
RoHS3 compliant
Reliable TO-270 package
Compatibility
Suitable for various wireless communication systems and RF power amplifier designs
Application Areas
Wireless base stations
Radio/TV broadcasting equipment
RF power amplifiers
Industrial, scientific, and medical (ISM) applications
Product Lifecycle
Current production model
Replacement and upgrade options available from NXP
Key Reasons to Choose This Product
High power and efficiency for improved system performance
Broad operating frequency range for versatile applications
Robust and reliable design for long-term use
Optimized thermal management for stable operation
Compliance with RoHS regulations for environmental friendliness