Manufacturer Part Number
MRF6VP3450HR6
Manufacturer
NXP Semiconductors
Introduction
High-power LDMOS RF transistor for wireless infrastructure applications
Product Features and Performance
High power output up to 90W
Operates at 860MHz frequency
Provides 22.5dB of gain
Rated for 110V and 1.4A current
Product Advantages
Suitable for wireless infrastructure applications like cellular base stations
Reliable and efficient LDMOS technology
Compact chassis mount package
Key Technical Parameters
LDMOS technology
90W output power
5dB gain
860MHz operating frequency
110V rated voltage, 1.4A rated current
Quality and Safety Features
RoHS3 compliant
Packaged in NI-1230 chassis mount package
Compatibility
Suitable for use in wireless infrastructure equipment like cellular base stations
Application Areas
Wireless infrastructure
Cellular base stations
Product Lifecycle
Currently in production
No information on discontinuation or replacement parts
Key Reasons to Choose
High power output and efficiency for wireless infrastructure needs
Reliable LDMOS technology
Compact and robust chassis mount package
Suitable for cellular base station applications
