MRF6VP3450HR5 - NXP USA Inc.

Manufacturer Part Number

MRF6VP3450HR5

Manufacturer

NXP Semiconductors

Introduction

This is a high-power LDMOS RF power transistor from NXP Semiconductors, designed for use in broadband wireless infrastructure applications.

Product Features and Performance

Dual configuration

Output power of 90W

Gain of 22.5dB

Operates at a frequency of 860MHz

Rated voltage of 110V

Test current of 1.4A

Test voltage of 50V

Chassis mount package

Product Advantages

Efficient and reliable performance

Suitable for broadband wireless infrastructure applications

Robust and durable design

Key Technical Parameters

Technology: LDMOS

Packaging: NI-1230

RoHS compliance: RoHS3 Compliant

Quality and Safety Features

Designed and manufactured to high quality standards

RoHS3 compliant, ensuring environmental safety

Compatibility

Suitable for use in broadband wireless infrastructure applications

Application Areas

Broadband wireless infrastructure

Cellular base stations

Radio transmitters

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades may be available from the manufacturer

Several Key Reasons to Choose This Product

High-performance LDMOS technology for efficient and reliable operation

Suitable for a variety of broadband wireless infrastructure applications

Robust and durable design for long-term use

Manufactured to high quality standards and RoHS3 compliant