A2T21H410-24SR6 - NXP Semiconductors / Freescale

Manufacturer Part Number

A2T21H410-24SR6

Manufacturer

NXP Semiconductors

Introduction

This product is an RF MOSFET (Dual) transistor designed for use in high-frequency, high-power applications.

Product Features and Performance

Dual LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor design

Capable of delivering up to 72W of output power

Operating frequency of 2.17GHz

Gain of 15.6dB

Rated voltage of 65V

Test current of 600mA

Test voltage of 28V

Product Advantages

Efficient power handling capabilities

High-frequency operation

Compact and space-saving design

Reliable and durable performance

Key Technical Parameters

Transistor Type: LDMOS (Dual)

Power Output: 72W

Current (Test): 600mA

Voltage (Rated): 65V

Gain: 15.6dB

Voltage (Test): 28V

Frequency: 2.17GHz

Quality and Safety Features

Lead-free / RoHS compliant

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Compatibility

This RF MOSFET transistor is designed to be compatible with various high-frequency, high-power applications.

Application Areas

Radio frequency (RF) power amplifiers

Wireless communication systems

Broadcast transmitters

Industrial and scientific equipment

Product Lifecycle

This product is currently available and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Efficient and high-performance power handling capabilities

Reliable and durable operation at high frequencies

Compact and space-saving design

Compliance with lead-free and RoHS requirements

Suitability for a wide range of high-frequency, high-power applications