A2T18S260W12NR3 - NXP Semiconductors / Freescale

Manufacturer Part Number

A2T18S260W12NR3

Manufacturer

NXP Semiconductors

Introduction

RF Mosfet LDMOS 28V 1.5A 1.805GHz ~ 1.88GHz 18.7dB 280W OM-880X-2L2L

Product Features and Performance

LDMOS transistor design

280W output power

7dB gain

Operates in the 1.805GHz to 1.88GHz frequency range

28V rated voltage

5A test current

OM-880X-2L2L package

Product Advantages

High power output

Efficient performance in the target frequency range

Compact OM-880X-2L2L package

Key Technical Parameters

Power Output: 280W

Test Current: 1.5A

Rated Voltage: 65V

Gain: 18.7dB

Test Voltage: 28V

Frequency Range: 1.805GHz to 1.88GHz

Quality and Safety Features

Moisture Sensitivity Level (MSL) 3 (168 Hours)

Current Rating: 10A

Compatibility

No specific compatibility information provided

Application Areas

RF power amplifier applications in the 1.805GHz to 1.88GHz frequency range

Product Lifecycle

No information provided on product lifecycle or availability of replacements/upgrades

Key Reasons to Choose This Product

High 280W power output

Efficient 18.7dB gain in the target 1.805GHz to 1.88GHz frequency range

Compact OM-880X-2L2L package

Suitable for RF power amplifier applications in the specified frequency range