Manufacturer Part Number
A2T07H310-24SR6
Manufacturer
NXP Semiconductors
Introduction
High-performance LDMOS RF transistor for wireless infrastructure applications
Product Features and Performance
47W output power
6dB gain
Operates at 880MHz frequency
700mA test current
28V test voltage
Suitable for chassis mount applications
Product Advantages
High power and efficiency
Excellent RF performance
Robust and reliable design
Compact and space-saving package
Key Technical Parameters
Technology: LDMOS
Power Output: 47W
Current (Test): 700mA
Voltage (Rated): 70V
Gain: 18.6dB
Voltage (Test): 28V
Frequency: 880MHz
Quality and Safety Features
RoHS3 compliant
Reliable NI-1230-4LS2L package
Compatibility
Compatible with various wireless infrastructure applications
Application Areas
Wireless base stations
RF power amplifiers
Cellular communications
Radar systems
Product Lifecycle
Current product offering
Replacements and upgrades may be available
Key Reasons to Choose
High power and efficiency for demanding applications
Excellent RF performance for reliable operation
Robust and reliable design for long-term use
Compact package for space-constrained installations
