A2T18H410-24SR6 - NXP USA Inc.

Manufacturer Part Number

A2T18H410-24SR6

Manufacturer

NXP Semiconductors

Introduction

High-performance RF MOSFET device suitable for use in industrial, scientific, and medical (ISM) applications operating at frequencies up to 2 GHz.

Product Features and Performance

Dual MOSFET configuration

Operates at frequencies up to 1.81 GHz

Power output of 71 W

Gain of 17.4 dB

Rated voltage of 65 V

Test voltage of 28 V

Test current of 800 mA

Product Advantages

Robust LDMOS technology for reliable operation

Suitable for use in industrial, scientific, and medical applications

Compact NI-1230-4LS2L package for efficient thermal management

Key Technical Parameters

Package: NI-1230-4LS2L

Configuration: Dual

Technology: LDMOS

Power Output: 71 W

Current (Test): 800 mA

Voltage (Rated): 65 V

Gain: 17.4 dB

Voltage (Test): 28 V

Frequency: 1.81 GHz

Quality and Safety Features

RoHS3 compliant

Manufactured by a reputable semiconductor company, NXP Semiconductors

Compatibility

Suitable for use in industrial, scientific, and medical (ISM) applications operating at frequencies up to 2 GHz

Application Areas

Industrial, scientific, and medical (ISM) applications

Wireless communication systems

Radio frequency (RF) power amplifiers

Product Lifecycle

Current product, not nearing discontinuation

Replacement or upgrade options available from NXP Semiconductors

Key Reasons to Choose This Product

Robust LDMOS technology for reliable operation

High-performance specifications suitable for industrial, scientific, and medical applications

Compact and efficient package design

Manufactured by a reputable semiconductor company, NXP Semiconductors

RoHS3 compliance for environmental sustainability