Manufacturer Part Number
A2T18S262W12NR3
Manufacturer
NXP Semiconductors
Introduction
RF MOSFET LDMOS transistor
Product Features and Performance
Output power: 231W
Current rating: 1.6A
Voltage rating: 65V
Gain: 19.3dB
Operating frequency range: 1.805GHz to 1.88GHz
Product Advantages
High output power
Excellent RF performance
Reliable LDMOS technology
Key Technical Parameters
Transistor type: LDMOS
Package: OM-880X-2L2L
Moisture sensitivity level: 3 (168 hours)
Current rating: 10A
Quality and Safety Features
Meets high-reliability standards
Robust design for demanding applications
Compatibility
Suitable for use in various RF power amplifier designs
Application Areas
Cellular base stations
Radio transmitters
Satellite communications
Radar systems
Product Lifecycle
Current product offering
Replacement or upgrade options available
Key Reasons to Choose This Product
Proven LDMOS technology for high-power RF applications
Excellent RF performance characteristics
Reliable and robust design
Compatibility with a wide range of RF power amplifier designs
Availability of replacement or upgrade options