Manufacturer Part Number
A2T26H160-24SR3
Manufacturer
Freescale Semiconductor, Inc. (NXP Semiconductors)
Introduction
This product is a high-performance RF LDMOS transistor from Freescale Semiconductor, now part of NXP Semiconductors.
Product Features and Performance
Dual transistor configuration
28W output power
5dB gain
58GHz operating frequency
65V rated voltage
350mA test current
28V test voltage
Product Advantages
Robust LDMOS technology for reliable operation
Optimized for RF power amplifier applications
Suitable for various wireless communication systems
Key Technical Parameters
Technology: LDMOS
Power Output: 28W
Gain: 15.5dB
Voltage (Rated): 65V
Current (Test): 350mA
Voltage (Test): 28V
Frequency: 2.58GHz
Quality and Safety Features
Reliable performance and long lifespan
Compliance with industry standards
Compatibility
Suitable for use in RF power amplifier circuits
Compatible with various wireless communication applications
Application Areas
Wireless base stations
RF power amplifiers
Wireless communication systems
Product Lifecycle
Currently in active production
Replacement or upgrade parts may be available from the manufacturer
Key Reasons to Choose This Product
Proven LDMOS technology for reliable performance
High output power and gain for efficient RF amplification
Suitable for a wide range of wireless communication applications
Backed by the expertise of Freescale Semiconductor (NXP Semiconductors)
