PD20010-E - STMicroelectronics

Manufacturer Part Number

PD20010-E

Manufacturer

STMicroelectronics

Introduction

• RF Power MOSFET Transistor

Product Features and Performance

• High power density

• Low on-resistance

• High gain

• Operation up to 2 GHz

• 10W output power

• 40V rated voltage

• 5A current rating

Product Advantages

• Suitable for use in high-frequency, high-power applications

• Efficient power conversion

• Reliable and robust performance

Key Technical Parameters

• Technology: LDMOS

• Power Output: 10W

• Current (Test): 150mA

• Voltage (Rated): 40V

• Gain: 11dB

• Voltage (Test): 13.6V

• Current Rating: 5A

• Frequency: 2GHz

Quality and Safety Features

• RoHS3 compliant

• Formed lead package (PowerSO-10RF)

Compatibility

• Compatible with high-frequency, high-power RF applications

Application Areas

• Radio frequency (RF) power amplifiers

• Wireless communication systems

• Broadcast equipment

• Industrial/scientific/medical (ISM) applications

Product Lifecycle

• Current product

• Availability of replacement or upgraded models

Key Reasons to Choose This Product

• High power density and efficiency

• Reliable and robust performance

• Suitable for high-frequency, high-power applications

• RoHS3 compliance for environmental sustainability