Manufacturer Part Number
MRF6V10010NR4
Manufacturer
NXP Semiconductors
Introduction
High-performance RF LDMOS power transistor for wireless infrastructure applications
Product Features and Performance
10W output power
25dB gain
09GHz operating frequency
100V rated voltage
10mA test current
50V test voltage
Surface mount package
Product Advantages
Robust and reliable LDMOS technology
Optimized for wireless infrastructure applications
Efficient power handling and thermal management
Key Technical Parameters
Power output: 10W
Gain: 25dB
Frequency: 1.09GHz
Voltage (rated): 100V
Current (test): 10mA
Voltage (test): 50V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Compatible with various wireless infrastructure systems
Application Areas
Wireless base stations
Cellular network amplifiers
Wireless communication equipment
Product Lifecycle
Currently available product
No information on discontinuation or replacements
Key Reasons to Choose This Product
High-performance RF power transistor
Optimized for wireless infrastructure applications
Robust and reliable LDMOS technology
Efficient power handling and thermal management
RoHS3 compliant
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