Manufacturer Part Number
MRF6V12250HR5
Manufacturer
NXP Semiconductors
Introduction
High-power LDMOS RF power transistor
Product Features and Performance
275W output power
3dB gain
100V rated voltage
03GHz operating frequency
Suitable for high-power RF amplifier applications
Product Advantages
High power handling capability
Excellent RF performance
Robust LDMOS technology
Reliable and durable
Key Technical Parameters
Power output: 275W
Current (test): 100mA
Voltage (rated): 100V
Gain: 20.3dB
Voltage (test): 50V
Frequency: 1.03GHz
Mounting type: Chassis mount
Quality and Safety Features
RoHS3 compliant
Reliable packaging (NI-780H-2L)
Compatibility
Suitable for high-power RF amplifier applications
Application Areas
Radio frequency (RF) power amplifiers
Wireless infrastructure equipment
Broadcast transmitters
Industrial, scientific, and medical (ISM) equipment
Product Lifecycle
This is an active product, not nearing discontinuation
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose This Product
High power output capability (275W)
Excellent RF performance with 20.3dB gain
Robust LDMOS technology for reliability and durability
RoHS3 compliance for environmental responsibility
Compatibility with a wide range of high-power RF amplifier applications
