Manufacturer Part Number
MRF6V12500HR5
Manufacturer
NXP Semiconductors
Introduction
High-power, wideband LDMOS transistor for RF and microwave applications
Product Features and Performance
High power output up to 500W
Broadband frequency operation up to 1.03GHz
High gain of 19.7dB
Rugged and reliable LDMOS technology
Suitable for industrial, scientific, and medical (ISM) applications
Product Advantages
Excellent power handling capability
Wide operating frequency range
High efficiency and gain
Robust and durable design
Key Technical Parameters
Power Output: 500W
Current (Test): 200mA
Voltage (Rated): 110V
Voltage (Test): 50V
Frequency: 1.03GHz
Quality and Safety Features
RoHS3 compliant
Reliable and consistent performance
Thorough quality control and testing
Compatibility
Designed for use in RF and microwave applications
Application Areas
Industrial, scientific, and medical (ISM) equipment
Broadcast and communications transmitters
Radar systems
Wireless infrastructure
Product Lifecycle
This product is an active and widely-used part in the NXP Semiconductors portfolio
Replacement or upgrade options are available if needed
Key Reasons to Choose This Product
High-power and broadband performance
Proven LDMOS technology for reliable operation
Efficient and cost-effective solution for various RF and microwave applications
Comprehensive technical support and product availability from NXP Semiconductors