FQN1N50CTA - Fairchild Semiconductor

Manufacturer Part Number

FQN1N50CTA

Manufacturer

Fairchild (onsemi)

Introduction

N-Channel Enhancement Mode Field Effect Transistor

Product Features and Performance

Drain to Source Voltage (Vdss) of 500V

Vgs (Max) of ±30V

Low On-Resistance (Rds On) of 6Ohm @ 190mA, 10V

Continuous Drain Current (Id) of 380mA @ 25°C (Tc)

Input Capacitance (Ciss) of 195 pF @ 25V

Power Dissipation of 890mW (Ta), 2.08W (Tc)

Gate Charge (Qg) of 6.4 nC @ 10V

Product Advantages

High Voltage Capability

Low On-Resistance

High Reliability MOSFET Design

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Vgs(th) (Max) of 4V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 10V

Operating Temperature: -55°C ~ 150°C (TJ)

Quality and Safety Features

Qualified to industry standards

Robust design for reliable operation

Compatibility

Through Hole Mounting

Application Areas

General Purpose Power Switching

Motor Control

Power Supplies

Inverters

Industrial Controls

Product Lifecycle

Current production

Long-term availability and support

Key Reasons to Choose

High voltage capability

Low on-resistance for efficient power conversion

Reliable MOSFET design for long-term use

Wide range of industrial and consumer applications