Manufacturer Part Number
FQNL2N50BTA
Manufacturer
onsemi
Introduction
N-Channel Power MOSFET Transistor
Product Features and Performance
High Voltage N-Channel Power MOSFET
500V Drain-Source Voltage Rating
Low On-Resistance (RDS(on))
Low Gate Charge (Qg)
Wide Operating Temperature Range (-55°C to 150°C)
High Continuous Drain Current (350mA at 25°C)
Product Advantages
Excellent Switching Performance
High Efficiency
Reliable and Rugged Design
Suitable for High Voltage Power Conversion Applications
Key Technical Parameters
Drain-Source Voltage (VDS): 500V
Gate-Source Voltage (VGS): ±30V
On-Resistance (RDS(on)): 5.3Ω @ 175mA, 10V
Input Capacitance (Ciss): 230pF @ 25V
Power Dissipation (Ptot): 1.5W (Tc)
Gate Charge (Qg): 8nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Reliable and Robust Design
Compatibility
TO-92-3 Through Hole Package
Suitable for High Voltage Power Conversion Applications
Application Areas
High Voltage Power Supplies
Switching Power Supplies
Motor Drives
Industrial Electronics
Home Appliances
Product Lifecycle
Current Production
Replacement and Upgrade Options Available
Key Reasons to Choose This Product
High Voltage Capability
Low On-Resistance
Efficient Switching Performance
Wide Operating Temperature Range
Reliable and Durable Design
Compatibility with High Voltage Applications