Manufacturer Part Number
STD13N65M2
Manufacturer
STMicroelectronics
Introduction
High-performance power MOSFET for industrial and consumer applications
Product Features and Performance
650V N-Channel MOSFET
Low on-resistance (430mΩ @ 5A, 10V)
Low input capacitance (590pF @ 100V)
Supports up to 10A continuous drain current (at 25°C)
Maximum power dissipation of 110W (at case temperature)
Wide operating temperature range up to 150°C
Product Advantages
Optimized for high-efficiency power conversion
Excellent switching performance
Reliable and robust design
Compact DPAK (TO-252) package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
Threshold Voltage (Vgs(th)): 4V @ 250A
On-Resistance (Rds(on)): 430mΩ @ 5A, 10V
Input Capacitance (Ciss): 590pF @ 100V
Gate Charge (Qg): 17nC @ 10V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for a wide range of industrial and consumer power conversion applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
UPS systems
Appliances
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and robust design for high-stress applications
Optimized for high-efficiency power conversion
Compact DPAK package for space-constrained designs
Wide operating temperature range for demanding environments
STD14NM60NSTMicroelectronics
STD13007AUK