Manufacturer Part Number
STD13N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in DPAK package
Product Features and Performance
Voltage rating of 600V
Continuous drain current of 11A at 25°C
On-resistance of 365mΩ at 5.5A, 10V
Input capacitance of 730pF at 100V
Power dissipation of 110W at Tc
Product Advantages
Low on-resistance for efficient power conversion
High voltage rating for wide range of applications
Compact DPAK package for space-saving designs
Suitable for high-frequency switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±25V
On-resistance (Rds(on)): 365mΩ at 5.5A, 10V
Continuous Drain Current (Id): 11A at 25°C
Input Capacitance (Ciss): 730pF at 100V
Power Dissipation (Ptot): 110W at Tc
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Power inverters
Other high-frequency, high-voltage power conversion circuits
Product Lifecycle
This product is an active and widely used component
Replacements and upgrades may be available from STMicroelectronics
Several Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, high voltage rating, and high current capability
Compact DPAK package for space-saving designs
Suitable for high-frequency switching applications
Reliable and long-lasting due to robust design and wide operating temperature range
RoHS3 compliance for environmental sustainability
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